Chemistry World. February 11, 2015
The world’s first one-atom-thick silicon transistor has been made by scientists in the US. The transistor was created on a two-dimensional silicon material known as silicene, which has exceptional electrical performance that may even rival graphene.
Over the past decade, the emergence of graphene has stimulated interest in producing two-dimensional allotropes of other elements. Phosphorene and germanene have both been grown from their three-dimensional counterparts in the hope they can usurp conventional semiconductors and be integrated into processors. But silicene, first produced in 2012, may provide a better route to superior electrical performance by virtue of its compatibility with current electronics manufacturing. READ MORE.